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| (R) STPS20L25CT/CG LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS n 2 x 10 A 25 V 150 C 0.35 V A1 K A2 K n n VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS AVALANCHE CAPABILITY SPECIFIED A2 A1 K A2 A1 DESCRIPTION Dual center tap Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB and D2PAK, this device is especially intended for use as a rectifier at the secondary of 3.3V SMPS units. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TO-220AB STPS20L25CT D2PAK STPS20L25CG Value 25 30 Tc = 145C = 0.5 Per diode Per device 10 20 220 1 3 5300 - 65 to + 150 150 10000 Unit V A A A A A W C C V/s tp = 10 ms Sinusoidal tp=2 s square F=1kHz tp = 100 s square tp = 1s Tj = 25C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/5 July 2003 - Ed : 4A STPS20L25CT/CG THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Tests conditions Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test: * tp = 380 s, < 2% Value 1.5 0.8 0.1 Unit C/W Min. Typ. 125 Max. 800 250 0.46 0.35 0.56 0.48 Unit A mA V VR = VRRM IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.41 0.30 To evaluate the maximum conduction losses use the following equation : P = 0.22 x IF(AV) + 0.013 IF2(RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient average forward current. temperature ( = 0.5). PF(av)(W) 5 = 0.05 12 = 0.1 = 0.2 = 0.5 IF(av)(A) Rth(j-a)=Rth(j-c) 4 3 2 T 10 8 =1 6 4 2 T Rth(j-a)=50C/W 1 IF(av) (A) 0 0 1 2 3 4 5 6 7 8 =tp/T tp 0 =tp/T tp Tamb(C) 50 75 100 125 150 9 10 11 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 2/5 STPS20L25CT/CG Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 200 180 160 140 120 100 80 60 IM 40 20 0 1E-3 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=25C Tc=75C 0.6 0.4 = 0.5 = 0.2 = 0.1 Tc=100C T 0.2 t =0.5 t(s) 1E-2 1E-1 1E+0 Single pulse tp(s) 1.0E-2 0.0 1.0E-4 =tp/T tp 1.0E-3 1.0E-1 1.0E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). 5E+2 1E+2 Tj=125C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(nF) IR(mA) Tj=150C 5.0 F=1MHz Tj=25C 1E+1 1.0 1E+0 1E-1 1E-2 Tj=25C VR(V) 0 5 10 15 20 25 VR(V) 0.1 1 2 5 10 20 50 Fig. 9: Forward voltage drop versus forward current (maximum values). Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness : 35 m). (STPS20L25G only) Rth(j-a) (C/W) 80 70 100.0 IFM(A) Typical values Tj=150C 10.0 Tj=25C 60 50 40 30 20 VFM(V) 1.0 Tj=125C 10 0 0 4 8 12 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 S(Cu) (cm) 16 20 24 28 32 36 40 3/5 STPS20L25CT/CG PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 C2 Millimeters Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0 8 Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0 8 D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESS THAN 2mm A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 FOOTPRINT DIMENSIONS (in millimeters) 16.90 n COOLING METHOD: (METHOD C) BY CONDUCTION 10.30 1.30 5.08 3.70 8.90 4/5 STPS20L25CT/CG PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. n n n COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.55 M.N MAXIMUM TORQUE VALUE : 0.70 M.N Ordering type STPS20L25CT STPS20L25CG STPS20L25CG-TR Marking STPS20L25CT STPS20L25CG STPS20L25CG Package TO-220AB D2PAK D2PAK Weight 2.23g 1.48g 1.48g Base qty 50 50 1000 Delivery mode Tube Tube Tape & reel n EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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